Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263 IRF60SC241ARMA1
- RS-stocknr.:
- 220-7472
- Fabrikantnummer:
- IRF60SC241ARMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,29
(excl. BTW)
€ 8,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,645 | € 7,29 |
| 20 - 48 | € 3,395 | € 6,79 |
| 50 - 98 | € 3,17 | € 6,34 |
| 100 - 198 | € 2,955 | € 5,91 |
| 200 + | € 2,74 | € 5,48 |
*prijsindicatie
- RS-stocknr.:
- 220-7472
- Fabrikantnummer:
- IRF60SC241ARMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 363A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 311nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 363A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 311nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Low RDS(on)
High current capability
Industry standard package
Flexible pinout
Optimized for 10 V gate drive
Reduction in conduction losses
Increased power density
Drop in replacement to existing devices
Offers design flexibility
Provides immunity to false turn-on in noisy environments
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