Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF

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€ 13,155

(excl. BTW)

€ 15,915

(incl. BTW)

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750 +€ 0,711€ 10,67

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Verpakkingsopties
RS-stocknr.:
220-7479
Fabrikantnummer:
IRF7490TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

5.4A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Length

5mm

Height

1.75mm

Width

4 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-39-417

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Industry standard surface-mount power package

Capable of being wave-soldered

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