onsemi NVMFS5C420NWFT Type N-Channel MOSFET, 268 A, 40 V Enhancement, 5-Pin DFN NVMFS5C420NWFT1G
- RS-stocknr.:
- 221-6758
- Fabrikantnummer:
- NVMFS5C420NWFT1G
- Fabrikant:
- onsemi
Tekort aan voorraad
Vanwege een wereldwijd voorraadtekort, weten we niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 221-6758
- Fabrikantnummer:
- NVMFS5C420NWFT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 268A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMFS5C420NWFT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 6.3mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 268A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMFS5C420NWFT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 6.3mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard No | ||
The ON Semiconductor automotive power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. It available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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