Infineon CoolMOS Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251
- RS-stocknr.:
- 222-4714
- Fabrikantnummer:
- IPSA70R900P7SAKMA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 75 eenheden)*
€ 17,40
(excl. BTW)
€ 21,075
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 75 + | € 0,232 | € 17,40 |
*prijsindicatie
- RS-stocknr.:
- 222-4714
- Fabrikantnummer:
- IPSA70R900P7SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 30.5W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 30.5W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss)
Integrated ESD protection diode
Excellent thermal behaviour
Gerelateerde Links
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251