Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 222-4923
- Fabrikantnummer:
- IPP60R022S7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 284,05
(excl. BTW)
€ 343,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 350 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 5,681 | € 284,05 |
| 100 - 100 | € 5,397 | € 269,85 |
| 150 + | € 5,056 | € 252,80 |
*prijsindicatie
- RS-stocknr.:
- 222-4923
- Fabrikantnummer:
- IPP60R022S7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 390W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 390W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
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