Infineon IPS70R Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1

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RS-stocknr.:
222-4934
Fabrikantnummer:
IPS70R600P7SAKMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-251

Series

IPS70R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

43.1W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

10.5nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

2.4 mm

Height

6.22mm

Automotive Standard

No

The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

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