Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1
- RS-stocknr.:
- 222-4936
- Fabrikantnummer:
- IPS70R900P7SAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 15,55
(excl. BTW)
€ 18,825
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 675 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,622 | € 15,55 |
| 125 - 225 | € 0,485 | € 12,13 |
| 250 - 600 | € 0,454 | € 11,35 |
| 625 - 1225 | € 0,423 | € 10,58 |
| 1250 + | € 0,392 | € 9,80 |
*prijsindicatie
- RS-stocknr.:
- 222-4936
- Fabrikantnummer:
- IPS70R900P7SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPS70R | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Power Dissipation Pd | 30.5W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPS70R | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Power Dissipation Pd 30.5W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
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