Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223
- RS-stocknr.:
- 225-0556
- Fabrikantnummer:
- BSS123IXTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 114,00
(excl. BTW)
€ 138,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,038 | € 114,00 |
| 6000 - 12000 | € 0,036 | € 108,00 |
| 15000 + | € 0,035 | € 105,00 |
*prijsindicatie
- RS-stocknr.:
- 225-0556
- Fabrikantnummer:
- BSS123IXTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123NH6433XTMA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1
- Infineon BSS169I N-Channel MOSFET 100 V Depletion, 3-Pin SOT-23 BSS169IXTSA1
- Infineon BSP135I N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin SOT-223 BSP603S2LHUMA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 3-Pin SOT-223 BSP296NH6327XTSA1
