Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

RS-stocknr.:: 225-0557
Artikelnummer Distrelec:: 304-39-400
Fabrikantnummer:: BSS123IXTSA1
Fabrikant:: Infineon

Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

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RS-stocknr.:: 225-0557
Artikelnummer Distrelec:: 304-39-400
Fabrikantnummer:: BSS123IXTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190mA
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	BSS123I
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	0.63nC
	Maximum Power Dissipation Pd	0.5W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Width	3.7mm
	Standards/Approvals	No
	Height	1.8mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190mA
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series BSS123I
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 0.63nC
	Maximum Power Dissipation Pd 0.5W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Width 3.7mm
	Standards/Approvals No
	Height 1.8mm
	Automotive Standard No

Datasheet-BSS123IXTSA1

Infineon BSS123I Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS123IXTSA1

This MOSFET is a small-signal N-channel transistor designed for surface-mount applications, providing switching and amplification functions across a wide temperature range. It is intended for circuits requiring a depletion-mode device with modest current handling and moderate voltage capability, suitable for Compact assemblies where a SOT-223 package and conservative power handling are required.

Features and Benefits:

• 100 V drain-to-source rating delivers high-voltage switching capability
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility

Applications

• Used for low-current high-voltage switching in control circuits
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics

What ambient temperature range can it operate in?

It is specified to function correctly from -55°C up to 150°C.

What package should designers plan for when laying out the board?

The device comes in a SOT-223 surface-mount package with four pins for PCB footprint planning.

How does its gate charge affect switching performance?

A typical gate charge of 0.63 nC reduces required gate-drive energy and influences transition speed in switching topologies.

What limits the maximum continuous current in applications?

The specified continuous drain current of 190 mA defines thermal and conduction limits for sustained operation.

Is this intended as an automotive-grade component?

It is not classified to automotive standards and should not be assumed to meet automotive qualification.