Infineon BSS138I Type N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23
- RS-stocknr.:
- 225-0560
- Fabrikantnummer:
- BSS138IXTSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 225-0560
- Fabrikantnummer:
- BSS138IXTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | BSS138I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series BSS138I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
The Infineon BSS138I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
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