Vishay N-Channel 80 V Type N-Channel MOSFET, 62.3 A, 80 V, 4-Pin PowerPAK (8x8L) SIR122LDP-T1-RE3
- RS-stocknr.:
- 225-9924
- Fabrikantnummer:
- SIR122LDP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 11,05
(excl. BTW)
€ 13,37
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 5.960 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,105 | € 11,05 |
| 100 - 240 | € 1,05 | € 10,50 |
| 250 - 490 | € 0,829 | € 8,29 |
| 500 - 990 | € 0,774 | € 7,74 |
| 1000 + | € 0,662 | € 6,62 |
*prijsindicatie
- RS-stocknr.:
- 225-9924
- Fabrikantnummer:
- SIR122LDP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | N-Channel 80 V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series N-Channel 80 V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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