onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS-stocknr.:
- 229-6444
- Fabrikantnummer:
- NTBG045N065SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 11,44
(excl. BTW)
€ 13,84
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 728 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 11,44 |
| 10 - 99 | € 9,85 |
| 100 - 499 | € 8,54 |
| 500 + | € 7,51 |
*prijsindicatie
- RS-stocknr.:
- 229-6444
- Fabrikantnummer:
- NTBG045N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 242W | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 242W | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Gerelateerde Links
- onsemi SiC Power SiC N-Channel MOSFET 650 V, 7-Pin D2PAK NTBG045N065SC1
- onsemi SiC Power SiC N-Channel MOSFET 650 V, 7-Pin D2PAK NTBG015N065SC1
- onsemi NTB SiC N-Channel MOSFET 650 V, 7-Pin D2PAK-7L NTBG023N065M3S
- onsemi SiC Power SiC N-Channel MOSFET 100 V, 7-Pin D2PAK NTBGS004N10G
- ROHM SCT SiC N-Channel MOSFET 650 V, 7-Pin D2PAK SCT3030AW7TL
- ROHM SCT SiC N-Channel MOSFET 650 V, 7-Pin D2PAK SCT3060AW7TL
- ROHM SCT SiC N-Channel MOSFET 650 V, 7-Pin D2PAK SCT3080AW7TL
- ROHM SCT SiC N-Channel MOSFET 650 V, 7-Pin D2PAK SCT3120AW7TL
