onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263
- RS-stocknr.:
- 229-6441
- Fabrikantnummer:
- NTBG015N065SC1
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 229-6441
- Fabrikantnummer:
- NTBG015N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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