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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	145A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	SiC Power
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	283nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500W
	Maximum Gate Source Voltage Vgs	22 V
	Forward Voltage Vf	4.8V
	Maximum Operating Temperature	175°C
	Height	9.4mm
	Standards/Approvals	No
	Width	4.7 mm
	Length	10.2mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 145A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series SiC Power
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 283nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500W
	Maximum Gate Source Voltage Vgs 22 V
	Forward Voltage Vf 4.8V
	Maximum Operating Temperature 175°C
	Height 9.4mm
	Standards/Approvals No
	Width 4.7 mm
	Length 10.2mm
	Automotive Standard No

Datasheet - NTBG015N065SC1

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263

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