onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263 NTBGS004N10G
- RS-stocknr.:
- 229-6446
- Fabrikantnummer:
- NTBGS004N10G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 12,42
(excl. BTW)
€ 15,02
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 6,21 | € 12,42 |
| 20 - 198 | € 5,35 | € 10,70 |
| 200 + | € 4,645 | € 9,29 |
*prijsindicatie
- RS-stocknr.:
- 229-6446
- Fabrikantnummer:
- NTBGS004N10G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor power MOSFET has rugged technology for utmost reliability. It is specifically designed for wide SOA applications from a 48V bus.
Hot swap tolerant with superior SOA curve
ROHS compliant
Reduces conduction loss
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