Infineon CoolSiC Type N-Channel MOSFET, 59 A, 650 V Enhancement, 4-Pin TO-247 IMZA65R027M1HXKSA1

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€ 13,86

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€ 16,77

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Verpakkingsopties
RS-stocknr.:
232-0401
Fabrikantnummer:
IMZA65R027M1HXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Low capacitances

Optimized switching behaviour at higher currents

Superior gate oxide reliability

Excellent thermal behaviour

Increased avalanche capability

Works with standard driver

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