Infineon OptiMOS 5 Type N-Channel MOSFET, 64 A, 80 V, 8-Pin PQFN ISZ0602NLSATMA1
- RS-stocknr.:
- 232-6769
- Fabrikantnummer:
- ISZ0602NLSATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,66
(excl. BTW)
€ 9,27
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 4.695 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,532 | € 7,66 |
| 50 - 120 | € 1,38 | € 6,90 |
| 125 - 245 | € 1,288 | € 6,44 |
| 250 - 495 | € 1,196 | € 5,98 |
| 500 + | € 1,102 | € 5,51 |
*prijsindicatie
- RS-stocknr.:
- 232-6769
- Fabrikantnummer:
- ISZ0602NLSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.9mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.9mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Height 3.4mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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