STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW70N120G2V

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Verpakkingsopties
RS-stocknr.:
233-3024
Fabrikantnummer:
SCTW70N120G2V
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTW70N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

2.7V

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

547W

Maximum Operating Temperature

200°C

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Height

20.15mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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