Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 22,19

(excl. BTW)

€ 26,85

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 4.930 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
5 - 20€ 4,438€ 22,19
25 - 45€ 3,818€ 19,09
50 - 120€ 3,594€ 17,97
125 - 245€ 3,326€ 16,63
250 +€ 3,064€ 15,32

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
233-4393
Fabrikantnummer:
ISC011N06LM5ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

288A

Maximum Drain Source Voltage Vds

60V

Series

ISC

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

170nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.89kW

Maximum Operating Temperature

175°C

Length

6.1mm

Height

5.35mm

Width

1.2 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Higher operating temperature rating to 175°C

Superior thermal performance

Gerelateerde Links