Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- RS-stocknr.:
- 233-4393
- Fabrikantnummer:
- ISC011N06LM5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 20,22
(excl. BTW)
€ 24,465
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 4.930 stuk(s) vanaf 04 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,044 | € 20,22 |
| 25 - 45 | € 3,478 | € 17,39 |
| 50 - 120 | € 3,276 | € 16,38 |
| 125 - 245 | € 3,034 | € 15,17 |
| 250 + | € 2,792 | € 13,96 |
*prijsindicatie
- RS-stocknr.:
- 233-4393
- Fabrikantnummer:
- ISC011N06LM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 1.89kW | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Higher operating temperature rating to 175°C
Superior thermal performance
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