Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- RS-stocknr.:
- 233-4397
- Fabrikantnummer:
- ISZ034N06LM5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,32
(excl. BTW)
€ 19,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,632 | € 16,32 |
| 50 - 90 | € 1,55 | € 15,50 |
| 100 - 240 | € 1,484 | € 14,84 |
| 250 - 490 | € 1,419 | € 14,19 |
| 500 + | € 1,321 | € 13,21 |
*prijsindicatie
- RS-stocknr.:
- 233-4397
- Fabrikantnummer:
- ISZ034N06LM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
The Infineon 60 V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Very low voltage overshoot
Ultra low charges
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