Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- RS-stocknr.:
- 233-4397
- Fabrikantnummer:
- ISZ034N06LM5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,32
(excl. BTW)
€ 19,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.400 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,632 | € 16,32 |
| 50 - 90 | € 1,55 | € 15,50 |
| 100 - 240 | € 1,484 | € 14,84 |
| 250 - 490 | € 1,419 | € 14,19 |
| 500 + | € 1,321 | € 13,21 |
*prijsindicatie
- RS-stocknr.:
- 233-4397
- Fabrikantnummer:
- ISZ034N06LM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon 60 V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Very low voltage overshoot
Ultra low charges
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ034N06LM5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ0703NLSATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ0702NLSATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 60 V, 8-Pin PQFN 3 x 3 BSZ100N06NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 ISC011N06LM5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ040N04LSGATMA1
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 BSZ146N10LS5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ034N04LSATMA1
