ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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€ 2.302,50

(excl. BTW)

€ 2.785,00

(incl. BTW)

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RS-stocknr.:
235-2689
Fabrikantnummer:
R6509END3TL1
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Height

10.4mm

Standards/Approvals

No

Length

6.4mm

Width

2.4 mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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