ROHM Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220FM R8003KNXC7G
- RS-stocknr.:
- 235-2699
- Fabrikantnummer:
- R8003KNXC7G
- Fabrikant:
- ROHM
Subtotaal (1 tube van 1000 eenheden)*
€ 1.137,00
(excl. BTW)
€ 1.376,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 1000 + | € 1,137 | € 1.137,00 |
*prijsindicatie
- RS-stocknr.:
- 235-2699
- Fabrikantnummer:
- R8003KNXC7G
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.87mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 29.87mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 10.3mm | ||
Automotive Standard No | ||
The ROHM R8xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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