Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1

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€ 997,50

(excl. BTW)

€ 1.207,50

(incl. BTW)

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  • Verzending vanaf 25 mei 2026
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RS-stocknr.:
235-4854
Fabrikantnummer:
IPD18DP10LMATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13.9A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

178mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

-42nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Available in 4 different packages

Wide range

Normal level and logic level availability

Ideal for high and low switching frequency

Easy Interface to MCU

Low design complexity

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