Toshiba T2N7002AK Type N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 T2N7002AK,LM(T
- RS-stocknr.:
- 236-3585P
- Fabrikantnummer:
- T2N7002AK,LM(T
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 500 eenheden (geleverd op een rol)*
€ 17,50
(excl. BTW)
€ 21,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 33.750 stuk(s) vanaf 26 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 500 - 750 | € 0,035 |
| 1000 - 1250 | € 0,032 |
| 1500 - 2750 | € 0,032 |
| 3000 + | € 0,03 |
*prijsindicatie
- RS-stocknr.:
- 236-3585P
- Fabrikantnummer:
- T2N7002AK,LM(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | T2N7002AK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Typical Gate Charge Qg @ Vgs | 0.27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -0.87V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.9mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series T2N7002AK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Typical Gate Charge Qg @ Vgs 0.27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -0.87V | ||
Maximum Operating Temperature 150°C | ||
Width 2.9mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2.4mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C