Vishay SiR Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- RS-stocknr.:
- 239-5394
- Fabrikantnummer:
- SiR588DP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,95
(excl. BTW)
€ 7,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.850 stuk(s) vanaf 31 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,595 | € 5,95 |
*prijsindicatie
- RS-stocknr.:
- 239-5394
- Fabrikantnummer:
- SiR588DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 59.5 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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