Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- RS-stocknr.:
- 239-5386
- Fabrikantnummer:
- SiR582DP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.172,00
(excl. BTW)
€ 2.628,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 01 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,724 | € 2.172,00 |
*prijsindicatie
- RS-stocknr.:
- 239-5386
- Fabrikantnummer:
- SiR582DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 33.5nC | |
| Maximum Power Dissipation Pd | 92.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 33.5nC | ||
Maximum Power Dissipation Pd 92.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5.15 mm | ||
Length 6.15mm | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Gerelateerde Links
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- Vishay N-Channel MOSFET 80 V PowerPAK SO-8 SIR120DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR826LDP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SIR680LDP-T1-RE3
- Vishay TrenchFET N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SIR680DP-T1-RE3