Vishay SISA10BDN Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- RS-stocknr.:
- 239-5398
- Fabrikantnummer:
- SISA10BDN-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,75
(excl. BTW)
€ 8,17
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 6.030 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,675 | € 6,75 |
*prijsindicatie
- RS-stocknr.:
- 239-5398
- Fabrikantnummer:
- SISA10BDN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8PT | |
| Series | SISA10BDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8PT | ||
Series SISA10BDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
Vishay SISA10BDN Series MOSFET, 30V Maximum Drain Source Voltage, 104A Maximum Continuous Drain Current - SISA10BDN-T1-GE3
This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in Compact electronic assemblies. It operates across a wide temperature range and suits applications demanding substantial continuous drain current and efficient conduction at low voltage. The device integrates a low on-resistance and modest gate charge to balance switching performance and thermal handling in densely packaged systems.
Features and Benefits:
• 104A continuous drain current enables high-current switching capability
• 30V drain-source rating supports low-voltage power rails
• 0.0036Ω Rds(on) reduces conduction losses and heat generation
• 11.7nC gate charge allows efficient gate drive and switching control
• 63W power dissipation accommodates significant thermal load
• 20V maximum gate-source voltage protects gate from overdrive
• 30V drain-source rating supports low-voltage power rails
• 0.0036Ω Rds(on) reduces conduction losses and heat generation
• 11.7nC gate charge allows efficient gate drive and switching control
• 63W power dissipation accommodates significant thermal load
• 20V maximum gate-source voltage protects gate from overdrive
Applications
• Suitable for motor driver stages in automation equipment
• Ideal for high-current DC-DC converter outputs
• Used for synchronous rectification in power supplies
• Can be used for load switching in industrial controllers
• Used with Compact power modules requiring SMD mounting
• Ideal for high-current DC-DC converter outputs
• Used for synchronous rectification in power supplies
• Can be used for load switching in industrial controllers
• Used with Compact power modules requiring SMD mounting
What temperature extremes can the device withstand during operation?
It is rated to operate from -55°C up to 150°C, allowing use in challenging thermal environments.
Which package type should designers allow footprint space for?
The component is supplied in a PowerPAK 1212-8PT surface-mount package requiring an 8-pin SMD footprint.
How does the component perform under high-power conditions thermally?
Maximum power dissipation is 63W, indicating the device can handle substantial power when mounted with appropriate PCB thermal management.
Is it suitable where automotive qualification is mandatory?
The device is not specified as meeting automotive standard approvals, so it should not be assumed to replace automotive-qualified parts.
What gate drive considerations are necessary to avoid damage?
Gate drive amplitude must not exceed 20V to remain within the maximum gate-source voltage rating.
Gerelateerde Links
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay SiSA14BDN Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA14BDN-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 8-Pin PowerPAK 1212-8PT SISA18BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3