Vishay SiSA14BDN Type N-Channel MOSFET, 72 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA14BDN-T1-GE3
- RS-stocknr.:
- 239-5403
- Fabrikantnummer:
- SISA14BDN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,35
(excl. BTW)
€ 7,68
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 5.930 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,635 | € 6,35 |
| 100 - 490 | € 0,599 | € 5,99 |
| 500 - 990 | € 0,54 | € 5,40 |
| 1000 - 2490 | € 0,509 | € 5,09 |
| 2500 + | € 0,478 | € 4,78 |
*prijsindicatie
- RS-stocknr.:
- 239-5403
- Fabrikantnummer:
- SISA14BDN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSA14BDN | |
| Package Type | PowerPAK 1212-8PT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00538Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 45 V | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSA14BDN | ||
Package Type PowerPAK 1212-8PT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00538Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 45 V | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
The Vishay N channel MOSFET has drain current of 72 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection
100 % Rg and UIS tested
Gerelateerde Links
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA14BDN-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA18BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
- Vishay TrenchFET Dual N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8PT Si7252ADP-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SISHA10DN-T1-GE3
- Vishay N-Channel MOSFET 20 V PowerPAK 1212-8 SI7232DN-T1-GE3
