STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 182,40

(excl. BTW)

€ 220,70

(incl. BTW)

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  • Verzending vanaf 21 januari 2027
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Per stuk
Per tube*
50 - 50€ 3,648€ 182,40
100 - 200€ 3,466€ 173,30
250 +€ 3,223€ 161,15

*prijsindicatie

RS-stocknr.:
239-5543
Fabrikantnummer:
STP80N240K6
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

STP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

150°C

Length

28.9mm

Height

4.6mm

Width

10.4 mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.

Worldwide best RDS(on) x area

Worldwide best FOM (figure of merit)

Ultra low gate charge

100% avalanche tested

Zener-protected

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