Vishay Type P-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
- RS-stocknr.:
- 239-8685
- Fabrikantnummer:
- SQS405CENW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 18,45
(excl. BTW)
€ 22,325
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.025 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,738 | € 18,45 |
| 250 - 600 | € 0,694 | € 17,35 |
| 625 - 1225 | € 0,627 | € 15,68 |
| 1250 - 2475 | € 0,59 | € 14,75 |
| 2500 + | € 0,554 | € 13,85 |
*prijsindicatie
- RS-stocknr.:
- 239-8685
- Fabrikantnummer:
- SQS405CENW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 197W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8W | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 197W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQS is automotive P-Channel MOSFET which operates at 40 V and 175 °C temperature. This MOSFET used for high power density.
AEC-Q101 qualified
UIS tested
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