Vishay SQS Type N-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- RS-stocknr.:
- 268-8375
- Fabrikantnummer:
- SQSA82CENW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 13,05
(excl. BTW)
€ 15,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.050 stuk(s) vanaf 24 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,522 | € 13,05 |
| 50 - 75 | € 0,512 | € 12,80 |
| 100 - 225 | € 0,39 | € 9,75 |
| 250 - 975 | € 0,382 | € 9,55 |
| 1000 + | € 0,237 | € 5,93 |
*prijsindicatie
- RS-stocknr.:
- 268-8375
- Fabrikantnummer:
- SQSA82CENW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.073Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 27W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQS | ||
Package Type PowerPAK 1212-8W | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.073Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 27W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and surface mount type device.
AEC Q101 qualified
ROHS compliant
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