STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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Subtotaal (1 tube van 30 eenheden)*

€ 134,94

(excl. BTW)

€ 163,29

(incl. BTW)

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  • Plus verzending 60 stuk(s) vanaf 29 december 2025
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RS-stocknr.:
240-0613
Fabrikantnummer:
STWA32N65DM6AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Series

STW

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

320W

Typical Gate Charge Qg @ Vgs

52.6nC

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

40.92mm

Width

15.8 mm

Height

5.1mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

AEC-Q101 qualified

Fast-recovery body diode

Lower RDS(on) x area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely dv/dt ruggedness

Zener-protected

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