Infineon IPL Type N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R1K4P7ATMA1

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€ 6,65

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Verpakkingsopties
RS-stocknr.:
240-8550
Fabrikantnummer:
IPLK80R1K4P7ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

800V

Package Type

ThinPAK 5x6

Series

IPL

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.2mΩ

Maximum Gate Source Voltage Vgs

3 V

Maximum Power Dissipation Pd

43W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.42mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Fully optimized portfolio

Low EMI

The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.

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