Infineon IPL Type N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R900P7ATMA1
- RS-stocknr.:
- 240-8559
- Artikelnummer Distrelec:
- 304-24-010
- Fabrikantnummer:
- IPLK80R900P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,99
(excl. BTW)
€ 8,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,398 | € 6,99 |
| 50 - 120 | € 1,244 | € 6,22 |
| 125 - 245 | € 1,174 | € 5,87 |
| 250 - 495 | € 1,09 | € 5,45 |
| 500 + | € 1,006 | € 5,03 |
*prijsindicatie
- RS-stocknr.:
- 240-8559
- Artikelnummer Distrelec:
- 304-24-010
- Fabrikantnummer:
- IPLK80R900P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | ThinPAK 5x6 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.42mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 30424010 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type ThinPAK 5x6 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.42mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 30424010 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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