Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- RS-stocknr.:
- 241-9688
- Fabrikantnummer:
- IPG20N06S4L14AATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,81
(excl. BTW)
€ 4,61
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 14.995 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,762 | € 3,81 |
| 50 - 120 | € 0,656 | € 3,28 |
| 125 - 245 | € 0,618 | € 3,09 |
| 250 - 495 | € 0,572 | € 2,86 |
| 500 + | € 0,534 | € 2,67 |
*prijsindicatie
- RS-stocknr.:
- 241-9688
- Fabrikantnummer:
- IPG20N06S4L14AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IPG20N06S4L-14A | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO8 5 x 6 | ||
Series IPG20N06S4L-14A | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 N-channel automotive MOSFET has 60 V drain source voltage (VDS) & 20 A drain current (ID). It comes in dual SS08 (PG-TDSON-8) package. It is feasible for automatic optical inspection (AOI).
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
Gerelateerde Links
- Infineon Dual N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC097N06NSTATMA1
- Infineon Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L26ATMA1