Infineon BSC0 N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC010N04LS6ATMA1

RS-stocknr.:: 242-0290
Fabrikantnummer:: BSC010N04LS6ATMA1
Fabrikant:: Infineon

Infineon BSC0 N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC010N04LS6ATMA1

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20 - 48	€ 2,245	€ 4,49
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100 - 198	€ 1,94	€ 3,88
200 +	€ 1,80	€ 3,60

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RS-stocknr.:: 242-0290
Fabrikantnummer:: BSC010N04LS6ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	381A
	Maximum Drain Source Voltage Vds	40V
	Series	BSC0
	Package Type	SuperSO8 5 x 6
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.7mΩ
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 381A
	Maximum Drain Source Voltage Vds 40V
	Series BSC0
	Package Type SuperSO8 5 x 6
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.7mΩ
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - BSC010N04LS6ATMA1

Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC010N04LS6ATMA1

This MOSFET is a power-switching transistor designed for high-current, high-temperature operation in surface-mount assemblies. It provides N-channel switching capability for demanding power circuits and is intended for applications requiring substantial continuous drain current and elevated operating temperatures.

Features and Benefits:

• 381 A continuous drain current delivers sustained high-load performance
• 40 V drain-source rating enables medium-voltage power switching
• 0.7 mΩ Rds(on) minimises conduction losses under heavy current
• 81 W power dissipation supports elevated power throughput
• 80 nC typical gate charge reduces switching stress on drivers
• −55 °C to 175 °C rating permits operation across wide temperatures

Applications

• Suitable for high-current DC-DC converters in power systems
• Ideal for motor-drive stages requiring heavy current capacity
• Used with power-distribution modules in industrial equipment
• Can be used for synchronous rectification in supply designs
• Used for load-switching in harsh-temperature environments

What package and mounting style does this device use?

It is supplied in a SuperSO8 5x6 package configured for surface mount.

What is the maximum voltage that can be applied between drain and source?

The device tolerates up to 40 V between drain and source under specified conditions.

What gate voltage limits must be observed when driving this device?

Gate-to-source voltage must not exceed 20 V to avoid damaging the gate.

How does the thermal range affect deployment in extreme environments?

The device can operate from −55 °C up to 175 °C, enabling use in elevated-temperature applications where silicon junction limits are critical.