Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1

RS-stocknr.:: 242-5820
Fabrikantnummer:: IPB048N15N5LFATMA1
Fabrikant:: Infineon

Infineon iPB N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1

Subtotaal (1 rol van 1000 eenheden)*

€ 3.193,00

(excl. BTW)

€ 3.864,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 11 december 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 +	€ 3,193	€ 3.193,00

*prijsindicatie

RS-stocknr.:: 242-5820
Fabrikantnummer:: IPB048N15N5LFATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	273A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 273A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPB048N15N5LFATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB048N15N5LFATMA1

This n-channel MOSFET is a power switching device designed for high-current, high-voltage applications where robust thermal and electrical performance is required. It operates across a wide ambient range and is supplied in a surface-mount TO-263 package suitable for heat-managed PCBs. The device is RoHS-compliant and intended for systems requiring substantial continuous drain capability and controlled gate drive.

Features and Benefits:

• 100V drain-source withstand enabling high-voltage switching
• 273A continuous drain current for heavy-load handling
• 1.7mΩ low Rds(on) reducing conduction losses
• 81W power dissipation supporting high-power operation
• 80nC total gate charge for predictable switching energy
• 1.2V forward voltage minimising diode conduction drop

Applications

• Suitable for high-current power supplies and converters
• Ideal for motor-drive stages requiring large current
• Used for server power distribution and bus switching
• Can be used for telecom rectifiers and inverters
• Appropriate for industrial switching in harsh temperatures

What gate voltage limits must be observed for safe operation?

The gate should not exceed a 20V Vgs limit to prevent gate damage.

How does it tolerate extreme thermal environments?

It is specified to operate from -55°C up to +150°C for wide temperature-range use.

What mounting method is required for assembly?

The device is intended for surface mounting in a TO-263 footprint.

What conduction behaviour can designers expect from the intrinsic diode?

The forward conduction characteristic is specified as 1.2V Vf for diode-related current flow.

Which channel polarity does the device present for circuit integration?

It uses an N-channel configuration for conventional high-side or low-side switching.