Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263
- RS-stocknr.:
- 242-5820
- Fabrikantnummer:
- IPB048N15N5LFATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 4.190,00
(excl. BTW)
€ 5.070,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 4,19 | € 4.190,00 |
*prijsindicatie
- RS-stocknr.:
- 242-5820
- Fabrikantnummer:
- IPB048N15N5LFATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency.
Lower R DS(on) without compromising FOMgd and FOMoss
Lower output charge
Ultra-low reverse recovery charge(Q rr = 26 nC in SuperSO8)
175°C operating temperature
Pb-free lead plating
RoHS compliant
Drain-source breakdown voltage 150V
Maximum Drain current 120A
Gerelateerde Links
- Infineon N-Channel MOSFET 150 V, 3-Pin D2PAK IPB048N15N5LFATMA1
- Infineon N-Channel MOSFET 150 V, 3-Pin D2PAK IPB048N15N5ATMA1
- Infineon N-Channel MOSFET 100 V, 3-Pin D2PAK IPB120N10S405ATMA1
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS4615TRLPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS52N15DTRLP
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin D2PAK IRFS4115TRLPBF
- Infineon HEXFET Silicon N-Channel MOSFET 150 V, 7-Pin D2PAK IRFS4115TRL7PP
- Infineon HEXFET N-Channel MOSFET Transistor 40 V, 3-Pin D2PAK IRF4104SPBF