Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR

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€ 4,75

(excl. BTW)

€ 5,748

(incl. BTW)

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200 +€ 1,755€ 3,51

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Verpakkingsopties
RS-stocknr.:
243-9288
Fabrikantnummer:
AUIRF7343QTR
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

-55V

Package Type

SOIC

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

0.11mΩ

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free, RoHS Compliant

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