Infineon IPT Type N-Channel MOSFET, 400 A, 40 V, 8-Pin HSOF-8 IPT60R040S7XTMA1
- RS-stocknr.:
- 244-0909
- Fabrikantnummer:
- IPT60R040S7XTMA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 2,69
(excl. BTW)
€ 3,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 2,69 |
*prijsindicatie
- RS-stocknr.:
- 244-0909
- Fabrikantnummer:
- IPT60R040S7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IPT60R040S7 enables the best price performance for low frequency switching applications.CoolMOS™S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency.
CoolMOS™ S7 technology enables 22mΩ RDS(on) in the smallest footprint
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