Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252
- RS-stocknr.:
- 244-0943
- Fabrikantnummer:
- IPD65R225C7ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 2.285,00
(excl. BTW)
€ 2.765,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,914 | € 2.285,00 |
*prijsindicatie
- RS-stocknr.:
- 244-0943
- Fabrikantnummer:
- IPD65R225C7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
650V voltage
Revolutionary Best-in-Class RDS (on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Gerelateerde Links
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R225C7ATMA1
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6511END3TL1
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6511KND3TL1
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD65R660CFDAATMA1
- Infineon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R1K0PFD7SAUMA1
- Infineon N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R450P7ATMA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R380C6ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280P7ATMA1