Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1

RS-stocknr.:: 244-0945
Fabrikantnummer:: IPD80R280P7ATMA1
Fabrikant:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1

Subtotaal (1 rol van 2500 eenheden)*

€ 2.425,00

(excl. BTW)

€ 2.925,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 21 juni 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,97	€ 2.425,00

*prijsindicatie

RS-stocknr.:: 244-0945
Fabrikantnummer:: IPD80R280P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	N
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode N
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD80R280P7ATMA1

Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD80R280P7ATMA1

This MOSFET is a power N-channel transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range for demanding environments and includes an intrinsic diode with defined forward voltage, making it suitable for automotive and industrial power stages.

Features and Benefits:

• 40V maximum drain-source voltage enabling mid-voltage system use
• 180A continuous drain current supporting heavy current loads
• 1.2mΩ low Rds(on) reducing conduction losses
• 81W power dissipation allowing sustained high-power operation
• 80nC gate charge for Rapid switching performance
• Vgs 20V maximum gate rating protecting gate-drive design

Applications

• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in vehicles
• Used for motor-drive stages in electric systems
• Can be used for load switching in power management
• Appropriate for high-current SMD assemblies on boards

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C to +150°C, providing a wide thermal range for harsh environments.

How does the intrinsic diode behave electrically?

The body diode exhibits a forward voltage of 0.9V which affects recirculating current and conduction loss during reverse conduction.

What packaging and mounting considerations apply for PCB design?

It is supplied in a TO-252 package intended for surface mounting, requiring appropriate solder-pad design and thermal management on the PCB.

Is it suitable for automotive-grade projects regarding qualification?

It meets the automotive AEC‑Q101 standard for suitability in automotive electronic applications.