Infineon BSZ Type N-Channel MOSFET & Diode, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ0503NSIATMA1
- RS-stocknr.:
- 244-1566
- Fabrikantnummer:
- BSZ0503NSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,07
(excl. BTW)
€ 4,925
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.625 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,814 | € 4,07 |
| 50 - 120 | € 0,708 | € 3,54 |
| 125 - 245 | € 0,66 | € 3,30 |
| 250 - 495 | € 0,612 | € 3,06 |
| 500 + | € 0,57 | € 2,85 |
*prijsindicatie
- RS-stocknr.:
- 244-1566
- Fabrikantnummer:
- BSZ0503NSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.
N Channel
Superior thermal resistance
Pb-free lead plating;RoHS compliant
Halogen-free according to IEC61249-2-21
Gerelateerde Links
- Infineon BSZ Type N-Channel MOSFET & Diode 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ063N04LS6ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ033NE2LS5ATMA1