Infineon iPB Type N-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263 IPB60R060C7ATMA1

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€ 8,05

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RS-stocknr.:
250-0593
Fabrikantnummer:
IPB60R060C7ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. This series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on) A below 1Ohm*mm². It is suitable for hard and soft switching (PFC and high performance LLC). It has an increased MOSFET dv/dt ruggedness to 120V/ns and increased efficiency.

Enabling higher system efficiency by lower switching losses

Increased power density solutions due to smaller packages

Suitable for applications such as server, telecom and solar

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