Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF
- RS-stocknr.:
- 256-7275
- Fabrikantnummer:
- IRF630PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 7,80
(excl. BTW)
€ 9,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,56 | € 7,80 |
| 10 - 20 | € 1,312 | € 6,56 |
| 25 - 95 | € 1,286 | € 6,43 |
| 100 - 495 | € 1,15 | € 5,75 |
| 500 + | € 0,928 | € 4,64 |
*prijsindicatie
- RS-stocknr.:
- 256-7275
- Fabrikantnummer:
- IRF630PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Series | IRF630 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Series IRF630 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 4.65mm | ||
Automotive Standard No | ||
Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF
This power MOSFET is a semiconductor switch designed for high-voltage power applications, providing controlled conduction in N-channel configurations for through‑hole mounting. It is intended for circuits requiring robust voltage blocking and switching capability across a wide ambient temperature span.
Features and Benefits:
• 200V drain‑source rating enables high‑voltage switching
• 5.9A continuous drain current supports moderate load currents
• 0.4Ω Rds(on) reduces conduction losses during switching
• 74W power dissipation allows substantial thermal handling
• 43nC typical gate charge yields predictable switching behaviour
• 10V gate limit ensures compatibility with common gate drive levels
• 5.9A continuous drain current supports moderate load currents
• 0.4Ω Rds(on) reduces conduction losses during switching
• 74W power dissipation allows substantial thermal handling
• 43nC typical gate charge yields predictable switching behaviour
• 10V gate limit ensures compatibility with common gate drive levels
Applications
• Suitable for power switching in offline converters
• Ideal for amplifier output stage switching duties
• Used with motor‑control drivers in compact assemblies
• Can be used for replacement transistor tasks in TO‑220 designs
• Suitable for industrial power supplies with through‑hole assembly
• Ideal for amplifier output stage switching duties
• Used with motor‑control drivers in compact assemblies
• Can be used for replacement transistor tasks in TO‑220 designs
• Suitable for industrial power supplies with through‑hole assembly
What thermal range can it withstand during operation?
It operates reliably from -55°C to +150°C, accommodating harsh thermal environments.
How is the device mounted on a PCB or heatsink?
The component uses a TO‑220AB package with three through‑hole pins for soldered board retention and heatsink attachment via the tab.
What is the channel polarity and typical forward voltage?
The device employs an N‑type channel and exhibits a forward voltage of approximately 2V under conduction conditions.
Is it suitable for automotive qualification?
It is not certified to automotive standards but may be used in non‑automotive electronics that do not require those approvals.
Gerelateerde Links
- Vishay IRF630 Type N-Channel Power MOSFET 200 V, 3-Pin TO-220AB IRF630PBF
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF630
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Vishay IRFI Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFI630GPBF
- Fairchild UniFET N-Channel MOSFET 200 V, 3-Pin TO-220AB FDP52N20
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay Type N-Channel MOSFET 60 V TO-220AB IRFZ44PBF
