Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF

RS-stocknr.:: 256-7275
Fabrikantnummer:: IRF630PBF
Fabrikant:: Vishay

Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF

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500 +	€ 0,928	€ 4,64

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RS-stocknr.:: 256-7275
Fabrikantnummer:: IRF630PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.9A
	Maximum Drain Source Voltage Vds	200V
	Series	IRF630
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.4Ω
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10V
	Forward Voltage Vf	2V
	Maximum Power Dissipation Pd	74W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	4.65mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.9A
	Maximum Drain Source Voltage Vds 200V
	Series IRF630
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.4Ω
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10V
	Forward Voltage Vf 2V
	Maximum Power Dissipation Pd 74W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 4.65mm
	Automotive Standard No

Datasheet - IRF630PBF

Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF

This power MOSFET is a through-hole N-channel transistor designed for switching and amplification in industrial electronic systems. It operates at high voltage and is suitable for use where substantial power handling and thermal endurance are required. The device is housed in a TO-220AB package and intended for integration into conventional board-mount assemblies.

Features and Benefits:

• 200V drain-source rating enabling high-voltage switching applications • 5.9A continuous drain current for sustained load handling • 0.4Ω Rds(on) reducing conduction losses under load • 74W power dissipation allowing elevated power transfer • 43nC typical gate charge for predictable drive requirements • Rated to +150°C for extended temperature operation

Applications

• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor-control stages in industrial automation equipment • Used for high-voltage relays and solid-state switching modules • Can be used for prototype and repair in through-hole power designs • Used with discrete amplifier circuits needing substantial power handling

What gate-drive constraints should I consider for switching?

The gate must tolerate up to 10V between gate and source

design the driver to deliver sufficient charge for the typical 43nC gate charge to achieve the desired switching speed.

How should thermal management be approached on this component?

Mount the package on a heatsink or ensure adequate PCB copper and airflow to dissipate up to 74W, and account for the maximum junction rating when calculating thermal resistance.

What mounting and connection format does it require?

It is a through-hole device with three pins in a TO-220AB package compatible with standard through-hole sockets and heatsink attachment methods.

What environmental temperature range is supported during operation?

It is specified for operation down to -55°C and up to +150°C, enabling use across a wide range of ambient conditions.