Vishay IRFPG30 Type N-Channel Power MOSFET, 3.1 A, 1000 V, 3-Pin TO-247AC IRFPG30PBF

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€ 4,69

(excl. BTW)

€ 5,674

(incl. BTW)

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Verpakkingsopties
RS-stocknr.:
256-7301
Fabrikantnummer:
IRFPG30PBF
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

1000V

Package Type

TO-247AC

Series

IRFPG30

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

+150°C

Height

5.21mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay IRFPG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 3.1A Maximum Continuous Drain Current - IRFPG30PBF


This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole installation in industrial and power-conversion contexts. It copes with demanding thermal environments and is intended for circuits requiring substantial voltage endurance and moderate continuous current, where a through-hole TO-247AC package and robust power dissipation are advantageous.

Features and Benefits:


• 1000V maximum drain-source voltage enables high-voltage switching applications • 125W power dissipation allows sustained power handling under load • 3.1A continuous drain current supports moderate current delivery • 5Ω maximum on-resistance minimises conduction losses at low gate drive • 80nC typical gate charge facilitates predictable switching behaviour • ±150°C/-55°C temperature range sustains wide operating environments

Applications


• Suitable for high-voltage industrial inverter stages • Ideal for switched-mode power supplies requiring through-hole mounting • Used for motor drive protection circuits with high voltage margins • Can be used for university and workshop prototyping of power circuits • Used with gate drivers in high-voltage switching assemblies

What gate drive considerations should be taken into account?


Expect a typical gate charge of 80nC at the rated gate voltage, so select a driver capable of sourcing and sinking sufficient current to meet desired switching speeds and to control switching losses.

How should thermal management be approached for this device?


The device can dissipate up to 125W

employ an appropriate heatsink and ensure thermal path integrity from the TO-247AC package to maintain junction temperature within limits during continuous operation.

What are the device’s environmental operating limits?


It is specified for operation down to -55°C and up to +150°C, permitting use across a broad temperature range in industrial settings.

What mechanical mounting and connection format does it use?


It is supplied in a through-hole TO-247AC package with three pins, suitable for bolted heatsink attachment and reliable soldered board connections.

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