Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC SIHG47N65E-GE3

RS-stocknr.:: 180-7734
Fabrikantnummer:: SIHG47N65E-GE3
Fabrikant:: Vishay

Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC SIHG47N65E-GE3

Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 7,10

(excl. BTW)

€ 8,59

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Wordt opgeheven

Laatste 25 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk
1 - 9	€ 7,10
10 - 24	€ 6,67
25 - 49	€ 6,04
50 - 99	€ 5,69
100 +	€ 5,33

*prijsindicatie

RS-stocknr.:: 180-7734
Fabrikantnummer:: SIHG47N65E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	47A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247AC
	Series	E
	Maximum Drain Source Resistance Rds	0.072Ω
	Maximum Power Dissipation Pd	417W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	273nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 47A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247AC
	Series E
	Maximum Drain Source Resistance Rds 0.072Ω
	Maximum Power Dissipation Pd 417W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 273nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

Applications

• Battery chargers

• Fluorescent ballast lighting

• High-intensity discharge (HID)

• Motor drives

• Power factor correction power supplies (PFC)

• Renewable energy

• Server and telecom power supplies

• Solar PV inverters

• Switch mode power supplies (SMPS)

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested