Vishay Type N-Channel MOSFET, 17 A, 200 V, 3-Pin TO-220 IRL640PBF
- RS-stocknr.:
- 256-7327
- Artikelnummer Distrelec:
- 304-40-860
- Fabrikantnummer:
- IRL640PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,41
(excl. BTW)
€ 11,385
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 915 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,882 | € 9,41 |
| 10 - 20 | € 1,686 | € 8,43 |
| 25 - 95 | € 1,652 | € 8,26 |
| 100 - 495 | € 1,362 | € 6,81 |
| 500 + | € 1,092 | € 5,46 |
*prijsindicatie
- RS-stocknr.:
- 256-7327
- Artikelnummer Distrelec:
- 304-40-860
- Fabrikantnummer:
- IRL640PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.65mm | ||
Automotive Standard No | ||
The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
Fast switching
Ease of paralleling
Simple drive requirements
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