Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

RS-stocknr.:: 256-7341
Fabrikantnummer:: SI1427EDH-T1-GE3
Fabrikant:: Vishay

Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3

Subtotaal (1 verpakking van 25 eenheden)*

€ 4,70

(excl. BTW)

€ 5,675

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

2.825 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
25 +	€ 0,188	€ 4,70

*prijsindicatie

RS-stocknr.:: 256-7341
Fabrikantnummer:: SI1427EDH-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2A
	Maximum Drain Source Voltage Vds	-20V
	Series	SI1427EDH
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.165Ω
	Maximum Gate Source Voltage Vgs	8V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	7.6nC
	Maximum Power Dissipation Pd	2.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2A
	Maximum Drain Source Voltage Vds -20V
	Series SI1427EDH
	Package Type SC-70
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.165Ω
	Maximum Gate Source Voltage Vgs 8V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 7.6nC
	Maximum Power Dissipation Pd 2.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 1.1mm
	Automotive Standard No

Datasheet - SI1427EDH-T1-GE3

Vishay SI1427EDH Series MOSFET, 20V Maximum Drain Source Voltage, 2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3

This p-channel MOSFET is a surface-mount semiconductor intended for switching and power-management roles in compact electronic assemblies. It operates across a wide temperature span suitable for demanding conditions and is provided in a low-profile package for space-constrained board designs.

Features and Benefits:

• Low Rds(on) 0.165Ω for reduced conduction losses
• Continuous drain current rating of 2A for medium-power switching
• Drain-source voltage rating of 20V enables low-voltage systems
• Typical gate charge 7.6 nC for predictable switching performance
• Forward voltage of -1.2V minimises voltage drop during conduction
• RoHS compliant for use in regulated manufacturing environments

Applications

• Suitable for battery-protection and load-switch circuits
• Ideal for handheld and portable device power paths
• Used with DC-DC converters in compact assemblies
• Can be used for reverse-current blocking in power rails
• Suitable for low-voltage motor-control gate arrangements

What package considerations affect board layout?

It is supplied in an SC-70 package with six pins, permitting tight pad arrangements and straightforward reflow soldering for dense surface-mount designs.

How does thermal performance influence cooling requirements?

Maximum power dissipation is 2.8 W, so PCB copper area and thermal vias should be sized to remove heat when operating near that dissipation level.

What gate limitations must designers observe?

The gate must not exceed 8V relative to the source to avoid damaging the device, and the typical gate charge of 7.6 nC guides driver selection.

How does the device cope with extreme ambient conditions?

It is rated to function from -55 °C up to +150 °C, permitting use where wide thermal endurance is required.