Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3
- RS-stocknr.:
- 256-7347
- Fabrikantnummer:
- SI2329DS-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 25 eenheden)*
€ 13,275
(excl. BTW)
€ 16,075
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 1.850 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,531 | € 13,28 |
| 50 - 75 | € 0,52 | € 13,00 |
| 100 - 225 | € 0,398 | € 9,95 |
| 250 - 975 | € 0,389 | € 9,73 |
| 1000 + | € 0,242 | € 6,05 |
*prijsindicatie
- RS-stocknr.:
- 256-7347
- Fabrikantnummer:
- SI2329DS-T1-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6A | |
| Maximum Drain Source Voltage Vds | -8V | |
| Package Type | SOT-23 | |
| Series | Si2329DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6A | ||
Maximum Drain Source Voltage Vds -8V | ||
Package Type SOT-23 | ||
Series Si2329DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Height 1.12mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
Vishay Si2329DS Series MOSFET, -8V Maximum Drain Source Voltage, 0.12Ω Maximum Drain Source Resistance - SI2329DS-T1-GE3
Features and Benefits:
• Continuous drain current rated to 6A supporting moderate load currents
• Maximum drain-source voltage of -8V allowing low-voltage switching
• Gate tolerance up to 5V for straightforward gate-drive compatibility
• Typical gate charge 19.3nC delivering fast switching with lower drive energy
• Power dissipation 2.5W permitting sustained switching under load
Applications
• Ideal for battery management and protection circuits
• Used with level-shifters in mixed-voltage control systems
• Can be used for polarity-reversal or reverse-current protection
• Suitable for Compact power distribution modules in automation equipment
What operating temperature range can I expect for reliable operation?
How does the package choice influence thermal performance?
What mechanical footprint considerations are relevant for dense assemblies?
What standards or material requirements are met for regulatory-compliant builds?
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