Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
- RS-stocknr.:
- 710-3260
- Fabrikantnummer:
- SI2333CDS-T1-GE3
- Fabrikant:
- Vishay
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (in een pakket van 10)
€ 3,38
(excl. BTW)
€ 4,09
(incl. BTW)
- RS-stocknr.:
- 710-3260
- Fabrikantnummer:
- SI2333CDS-T1-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.25 W | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V, 9 nC @ 2.5 V | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.25 W | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V, 9 nC @ 2.5 V | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
Gerelateerde Links
- Vishay Type P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2393DS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3
- Vishay Si2329DS Type P-Channel MOSFET -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3
- Vishay Si2301CDS Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay Si2305CDS Type P-Channel MOSFET 8 V Enhancement, 3-Pin SOT-23 SI2305CDS-T1-GE3

