Vishay P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
- RS-stocknr.:
- 710-3260
- Fabrikantnummer:
- SI2333CDS-T1-GE3
- Fabrikant:
- Vishay
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 710-3260
- Fabrikantnummer:
- SI2333CDS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.1 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.25 W | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V, 9 nC @ 2.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 5.1 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.25 W | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V, 9 nC @ 2.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
- Land van herkomst:
- CN
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