Vishay Type N, Type N, Type P, Type P-Channel MOSFET, 6 A, 20 V PowerPAK ChipFET SI5517DU-T1-GE3
- RS-stocknr.:
- 256-7375
- Fabrikantnummer:
- SI5517DU-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 256-7375
- Fabrikantnummer:
- SI5517DU-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N, Type N, Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 6 A | |
| Maximum Drain Source Voltage (Vds) | 20 V | |
| Package Type | PowerPAK ChipFET | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Maximum Drain Source Resistance (Rds) | 1.4 Ω | |
| Maximum Operating Temperature | 175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N, Type N, Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 6 A | ||
Maximum Drain Source Voltage (Vds) 20 V | ||
Package Type PowerPAK ChipFET | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Maximum Drain Source Resistance (Rds) 1.4 Ω | ||
Maximum Operating Temperature 175 °C | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
The Vishay Semiconductor Nand P-channel 20 V (D-S) mosfet 6A 8.3W surface mount its applications are complementary mosfet for portable devices Ideal for buck-boost circuits.
TrenchFET power mosfet
Small footprint area
Low on-resistance
Thin 0.8 mm profile
100% Rg tested
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